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Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

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Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

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Place of Origin : Made In China

Brand Name : Dayoo

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : Negotiable

Electrical Insulation : Yes

Max Operating Temperature : 1200°C

Highest Melting Point : 1900℃

Surface Finish : Smooth

Features : High temperature and high strength

Color : Grey

Density : 3.2 g/cm3

Chemical Inertness : High

Drawing Format : 2D/(PDF/CAD)3D(IGES/STEP)

Application : Grinding Industrial

Low Thermal Expansion : Yes

Heating Wire : NiCr80/20

Coefficient Of Friction : 0.15

Hardness : 9 Mohs

Corrosion Resistance : High

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Ultra-High Thermal Conductivity Silicon Nitride Ceramics for Power Electronics and New Energy Vehicles

Silicon nitride (Si₃N₄) ceramic substrates are manufactured using 99.5% high-purity raw materials through tape casting and gas pressure sintering processes. The products exhibit excellent thermal conductivity, high strength and reliability, making them an ideal thermal management solution for next-generation high-power electronic devices.

Primary Applications

  • Power electronics: IGBT, SiC power modules

  • New energy vehicles: Motor controllers, OBC

  • Rail transportation: Traction converters

  • PV inverters: High-power photovoltaic modules

  • 5G communications: Base station RF devices

Key Advantages

✓ Ultra-high thermal conductivity: ≥90W/(m·K)
✓ High strength & toughness: Flexural strength ≥600MPa
✓ Low thermal expansion: CTE 3.2×10⁻⁶/°C
✓ Excellent insulation: Volume resistivity >10¹⁴Ω·cm
✓ Superior reliability: Passes 1000 cycles of -40~150°C thermal shock test

Technical Specifications

Parameter Specification Test Standard
Material Purity Si₃N₄≥99.5% GB/T 16535
Dimensional Accuracy ±0.1% IPC-4101
Thermal Conductivity ≥90W/(m·K) ASTM E1461
Flexural Strength ≥600MPa ISO 14704
CTE 3.2×10⁻⁶/°C DIN 51045
Dielectric Strength ≥25kV/mm IEC 60672
Surface Roughness Ra≤0.2μm ISO 4287

Manufacturing Process

  1. Material preparation: Nano-grade Si₃N₊ powder modification

  2. Tape casting: Producing 0.1-1.2mm green tapes

  3. Isostatic pressing: 200MPa densification

  4. Gas pressure sintering: 1850°C/10MPa N₂ atmosphere

  5. Precision machining: Laser cutting, drilling

  6. Surface treatment: Double-side polishing to Ra≤0.2μm

Usage Guidelines

⚠️ Storage: Vacuum packed, moisture and dust proof
⚠️ Soldering: Recommended active metal brazing
⚠️ Mounting stress: Control <50MPa assembly stress
⚠️ Thermal design: Recommended with thermal grease

After-Sales Service

  • Warranty: 36-month quality guarantee

  • Technical support: Free thermal design consultation

  • Testing service: Third-party test reports available

  • Customization: Special sizes and structures

FAQ

Q: Advantages vs AlN substrates?
A: Main advantages:
① 3-5x higher strength
② Better thermal shock resistance
③ Higher reliability

Q: Maximum processable size?
A: Standard 200×200mm, special process up to 300×300mm.

Q: Recommended metallization?
A: Options include:
• DBC direct bonding copper
• AMB active metal brazing
• Thick film printing

Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy VehiclesUltra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles


Product Tags:

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